STMicroelectronics SCTL35N65G2V N-Kanal, SMD MOSFET 650 V / 40 A, 5-Pin PowerFLAT 8 x 8 HV
Marke: STMICROELECTRONICS
Hersteller Artikel-Nr.: SCTL35N65G2V
13,69 €
16,29 € inkl. MwSt. zzgl. Versandkosten
Produktdetails
- Artikeltyp
- MOSFET
- Lieferanten Artikel-Nr.
- 213-3942
- Zustand
- Neu
Technische Daten
- Channel-Modus
- Enhancement
- Channel-Typ
- N
- Dauer-Drainstrom max.
- 40 A
- Drain-Source-Spannung max.
- 650 V
- Drain-Source-Widerstand max.
- 0.067 O
- Gate-Schwellenspannung max.
- 5V
- Montage-Typ
- SMD
- Pinanzahl
- 5
- Serie
- SCTL35N65G2V
- Transistor-Werkstoff
- SiC
Produktbeschreibung
Channel-Typ = N
Dauer-Drainstrom max. = 40 A
Drain-Source-Spannung max. = 650 V
Serie = SCTL35N65G2V
Montage-Typ = SMD
Pinanzahl = 5
Drain-Source-Widerstand max. = 0.067 O
Channel-Modus = Enhancement
Gate-Schwellenspannung max. = 5V
Transistor-Werkstoff = SiC
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.Very fast and robust intrinsic body diode Low capacitance Source sensing pin for increased efficiency